个人简况
副教授，硕士生导师
教育背景
2009.09-2014.06 中国科学院苏州纳米技术与纳米仿生研究所 微电子学与固体电子学 硕博连读 工学博士
2005.09-2009.06 山东师范大学 物理学 理学学士
研究方向
本人主要从事半导体材料及其光电器件的制备、测试、表征分析
学术兼职/人才称号
无
研究概况
本人主持国家自然科学基金课题一项、山东省自然科学基金一项，中科院纳米器件应用重点实验室开放课题一项。发表学术论文30余篇，其中SCI/EI收录30余篇。授权国家发明专利四项。
主持或完成的科研项目
1．国家自然科学基金，n-硒化铟/p-黑磷范德瓦耳斯异质结光探测器的性能调控和机理探究，2019/01-2021/12，主持
2．山东省自然科学基金，高κ值氧化物二氧化铪对二维黑磷的热、电性质调控研究，2017/08-2019/12，主持
3．中国科学院纳米器件与应用重点实验室开放课题，n-硒化铟/p-黑磷范德瓦尔斯异质结光探测器的性能调控和机理探究，2019.05-2020.05，主持
学术成果
论文
1. K. L. Li, W. J. Wang, Effects of substrates on the optical properties of monolayer WS2. Journal of Crystal Growth, 540, 125645 (2020).
2. K. L. Li*, T. Y. Wang, W. J. Wang*, and X. G. Gao, Lattice vibration properties of MoS2/PtSe2 heterostructures, Journal of Alloys and Compounds, 820, 153192 (2020).
3. K. L. Li*, W. J. Wang*, J. C. Leng, B. X. Sun, D. K. Li, H. Yang, T. F. Jiang, and Y. He, Carrier dynamics in monolayer WS2/GaAs heterostructures. Applied Surface Science, 500, 144005 (2020).
4. W. J. Wang*, K. L. Li*, Y. Wang, X. W. Jiang, X. Y. Liu, and H. Qi, Investigation of the band alignment at MoS2/PtSe2 heterojunctions. Applied Physics Letters, 114, 201601 (2019).
5. X. K. Liu, K. L. Li*, X. J. Sun, Z. M. Shi, Z. H. Huang, Z. W. Li, L, Min, V. T. Botcha, X. Y. Chen, X. F. Xu, D. B. Li, Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment. Journal of Alloys and Compounds, 793, 599-603 (2019).
6. K. L. Li*, W. J. Wang, Q. Wang, and J. C. Leng, Strain relaxation comparison of GaInP and AlInAs metamorphic buffers grown on GaAs substrates. Journal of Alloys and Compounds, 768, 74-80 (2018).
7. K. L. Li, and W. J. Wang*, Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers, Journal of Crystal Growth, 496-497, 31-35 (2018).
8. X. K. Liu*, C. Hu, K. L. Li*, W. J. Wang, Z. W. Li, J. P. Ao, J. Wu, W. He, W. Mao, Q. Liu, W. J. Yu, and R. J. Chung, Investigation of the energy band at the molybdenum disulfide and ZrO2 heterojunctions, Nanoscale Research Letters, 13, 405 (2018).
9. Y. M. Zhao, J. Huang, Y. R. Sun, S. Z. Yu, K. L. Li*, and J. R. Dong*, Influence of growth conditions on the quality of strained InAlGaAs/AlGaAs quantum wells grown by MOCVD, Applied Physics A, 125, 117 (2019).
10. K. L. Li, Z. W. Li, Y. H. Hong, C. Hu, W. Mao, and X. K. Liu*, Investigation of CHF3 treatment on the energy band at the MoS2/HfZrO4 heterostructure, Applied Physics Letters, 113, 143506 (2018).
11. K. L. Li, Y. H. Hong, Z. W. Li, and X. K. Liu*, Thermal property engineering of InSe layer by a thin Al2O3 stress liner, Applied Physics Letters, 113, 021903 (2018).
12. K. L. Li, K. W. Ang, Y. M. Lv, and X. K. Liu*, Effects of Al2O3 capping layers on the thermal properties of thin black phosphorus, Applied Physics Letters, 109, 261901 (2016).
13. K. L. Li, Y. R. Sun, J. R. Dong*, Y. M. Zhao, S. Z. Yu, C. Y. Zhao, X. L. Zeng, and H. Yang, Effects of substrate miscut on the quality of In0.3Ga0.7As layers grown on metamorphic (Al)GaInP buffers by metal-organic chemical vapor deposition, Applied Physics Express,6, 065502 (2013).
14. K. L. Li, J. R. Dong*, Y. R. Sun, Y. M. Zhao, S. Z. Yu, C. Y. Zhao, X. L. Zeng, and H. Yang, Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates, Applied Surface Science, 288, 482 (2014).
15. K. L. Li*, Y. R. Sun, J. R. Dong, Y. M. Zhao, S. Z. Yu, C. Y. Zhao, and H. Yang, Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition,Journal of Crystal Growth,364, 158 (2013).
16. K. L. Li, Y. R. Sun, J. R. Dong*, Y. M. Zhao, S. Z. Yu, C. Y. Zhao, X. L. Zeng, and H. Yang, Effects of substrate miscut on dislocation glide in metamorphic (Al)GaInP buffers,Journal of Crystal Growth,380, 261 (2013).
17. K. L. Li*, Y. R. Sun, J. R. Dong, Y. He, X. L. Zeng, Y. M. Zhao, S. Z. Yu, C. Y. Zhao, Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates, Thin Solid Films, 593, 193 (2015).
专利
1. 李奎龙，董建荣，陆书龙，赵勇明，杨辉，基于晶片键合的三结太阳能电池及其制备方法，专利号：ZL 201110082967.5.
2. 李奎龙，董建荣，陆书龙，赵勇明，于淑珍，杨辉，GaInP/GaAs/InGaAsP/InGaAs四结级联太阳电池及其制备方法，专利号：ZL 201110235554.6.
3. 李奎龙，董建荣，赵勇明，孙雨润，于淑珍，杨辉，倒装GaInP/GaAs/Ge/Ge四结太阳电池及其制备方法，专利号：ZL 201210249532.X.
联系方式
邮箱：kuilongli@qlu.edu.cn